FMM23P20 2.3a 20v p-channel enhancement-mode mosfet 20v p-channel enhancement-mode mosfet v ds = -20v r ds(on), vgs@-4.5v , ids@-2.8a = 100m r ds(on), vgs@-2.5v, ids@-2.0a = 150m features advanced trench process technology high density cell design for ultra low on-resistance fully characterized avalanche voltage and current improved shoot-through fom maximum ratings and thermal characteristics (t a = 25 o c unless otherwise noted) symbol limit unit v ds -20 v gs 8 i d -2.3 i dm -10 t a = 25 o c 0.9 t a = 75 o c 0.57 t j , t stg -55 to 150 o c e as mj r jc junction-to-ambient thermal resistance (pcb mounted) r ja 145 note: 1. maximum dc current limited by the package 2. 1-in 2oz cu pcb board feb '06 rev 2 1 o c/w junction-to-case thermal resistance parameter v a w drain-source voltage p d pulsed drain current avalanche energy with single pulse i d =50a, v dd =25v, l=0.5mh operating junction and storage temperature range continuous drain current gate-source voltage maximum power dissipation n-channel mosfet top view internal schematic diagram to-236 (sot-23) gate drain source 1) 2) 2
FMM23P20 2.3a 20v p-channel enhancement-mode mosfet electrical characteristics paramete r symbol test condition min typ max unit static drain-source breakdown voltage bv dss v gs = 0v, i d = -10ua -20 - - v drain-source on-state resistance r ds(on) v gs = -4.5v, i d = -2.8a 69 100 drain-source on-state resistance r ds(on) v gs = -2.5v, i d = -2.0a 83 150 m = ?1,
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